窄线SeyfertⅠ型星系

本文将概述窄线SeyfertⅠ型星系 (包括具有类似性质但光度较大的类星体 )的主要观测特征、物理内涵及其理论解释和在活动星系核内部结构上的反映。窄线SeyfertⅠ型星系 (NLS1 ,以后NLS1都认为包括NLSI星系和NLS1类星体 )具有窄的允许线Hβ,它兼有Sy1和Sy2的某些特征。它具有强的FeⅡ光学线和弱的 [OⅢ ]λ5 0 0 7禁线 ,这明显不同于Sy2。在观测相关量的主成分统计分析中表明NLS1是活动星系核第一主向量表现为极端的一类。这包括 :( 1 )HβFWHM取极小 ;( 2 )FeⅡλ45 70 /Hβ 取极大 ;( 3)SⅢ ]λ1 892 /CⅢ ]λ1 90 9取极大 ,亦一定范围内宽线区电子密度取大值 ;( 4 )CⅣλ1 5 4 9线中心蓝移取极大 ;( 5 )高光度NLS1的软X射线光子数谱指数Γx 取极大 ;( 6)X射线相对流量变化方差最大等。基于以上观测结构和相应统计规律 (观测量与HβFWHM的关系 ) ,解释NLS1现象最佳的模型是高相对吸积率L/LEdd模型。NLS1比之典型宽线活动星系核具有较低的中心黑洞质量MBH。进一步 ,还发现这一模型是活动星系核主...     

一类奇摄动薄板弯曲问题的匹配渐近解

研究了一类薄板弯曲问题. 对四阶奇摄动边值问题, 引入伸长变量, 构造边界附近的内层解, 然后与外部解匹配. 最后用合成展开式理论, 得到了原问题的的渐近解. 关键词： 薄板弯曲 挠度 渐近解     

A study of Eu2O3, Sc2O3 co-doped tungsten matrix impregnated cathode

Eu₂O₃ and Sc₂O₃ co-doped W matrix impregnated cathodes have been prepared by the powder metallurgy method. The constitution of active elements on activated cathode surface is analyzed by in-situ Auger electron spectroscopy. It is found that although Eu exists in the matrix, no Eu is found on the cathode surface due to the formation of a stable Eu containing compound. Sc, Ba and O diffuse to the surface of the cathode and form an active surface layer during the activation period whereas the stable Eu-compound cannot liberate free Eu, which can diffuse from the cathode to the surface. The active substance of Sc, Ba and O on the cathode surface contribute to the emission property.     

Analysis of KrF excimer laser beam modification resulting from ablation under closed thick film flowing filtered water

The application of a closed thick film flowing filtered water to immerse the ablation etching mechanism of an excimer laser poses interesting possibilities concerning debris control, modification of machined feature topography and modification of the ablation rate. Furthermore, these parameters have been shown to be dependent on flow velocity; hence, offering further user control of machining characteristics. However, the impact of this technique requires investigation. This contribution offers comparison of the calculated ablation pressure and the effect on feature surface characteristics given for laser ablation of bisphenol A polycarbonate using KrF excimer laser radiation in ambient air against laser ablation of the same substrate under closed thick film flowing filtered water immersion. Also, an impact of such immersion equipment on the optical performance of the micromachining centre used is quantified and reviewed. The pressure is calculated to have risen by a magnitude of 48, when using the liquid immersed ablation technique. This increase in pressure is proposed to have an increased surface roughness, promoting the number of asperities with a surface area lower than 16 μm²; resulting in a diffuse reflection of light and an apparent darkening of features. The focal length of the optical system was accurately predicted to increase by 2.958 mm, when using the closed flowing liquid immersion equipment. This equipment is predicted to have increased the optical depth of focus via reduction in the angle of convergence of the two defining image rays; yet the perceived focus, measured discretely by mean feature wall angle, was found to be 25% smaller when using the closed thick film flowing filtered water immersion technique instead of similar laser ablation in ambient air. A compressed plume interaction is proposed as a contributing factor in this change.     

Structural investigations of the xTeO2-(1−x)GeO2 (x=0, 0.2, 0.4, 0.6, 0.8 and 1) tellurite glasses: A composition dependent Raman spectroscopic study

Raman spectra of xTeO₂-(1−x)GeO₂ (x=0, 0.2, 0.4, 0.6, 0.8 and 1) germanium tellurite glasses were measured and analyzed in an effort to follow the structural changes caused by mixing two typical glass formers. Systematic Raman intensity measurements have been performed in an effort to elucidate the composition induced structural changes and a possible mechanism accounting for these changes was proposed. The network structure of the glass is characterized by TeO₄ trigonal bipyramid mixed with TeO₃ trigonal pyramid units, while GeO₄ tetrahedral units are also present. Changing the GeO₂ content results in the conversion of the TeO₄ units to TeO₃ units with a neutral doubly bridged oxygen atom, while the existence of charged terminal oxygen atoms is questionable. The measured relative Raman intensities are semi-quantitatively correlated to the transformation of the TeO₄ trigonal bipyramid to TeO₃ trigonal pyramids.     

Single atom entropy squeezing for two two-level atoms interacting with a binomial field

In this paper we consider a system of two two-level atoms interacting with a binomial field in an ideal cavity. We investigate the time evolution of the single atom entropy squeezing, atomic inversion and the linear entropy for the present system. Furthermore, the relationship between the entropy squeezing and the entanglement is investigated. It is shown that the amounts of the nonclassical effects exhibited in the entropy squeezing are dependent on the different initial conditions. The entropy squeezing can give information on the corresponding linear entropy.     

The electric field modulation by three-dimensional crack on fused silica subsurface

The main factor of laser-induced damage is the modulation to electromagnetic field of laser by the crack on the subsurface. In this paper, a three-dimensional crack model on the exit surface is presented. Three-dimensional finite-difference time-domain (FDTD) method is employed to simulate the electric field intensity distribution in the vicinity of crack on fused silica subsurface. The roles of the crack width, depth, length and the gradient angle in the modulation to the incident light field are analyzed in detail. Results show that the crack size plays an important role in the electric modulation. With the increasing depth and width, the peak value of maximal electric field intensity appears in fused silica. However, the maximal electric field intensity tends to be a constant when the crack length reaches 1 μm. Besides, the enhancement of light intensity becomes obvious when total internal reflection occurs in fused silica. Our calculated results provide an advisable theoretical criterion to the corresponding experiment.     

Effects of copper and oxygen vacancies on the ferromagnetism of Mn- and Co-doped Cu2O

The ferromagnetic properties of Mn- and Co-doped Cu₂O with copper and oxygen vacancies (V_Cu and V_O) are studied by first-principles calculations. The results indicate that Mn-doped Cu₂O has an antiferromagnetic state in the near configuration, while it has a ferromagnetic state for the far configuration. On the contrary, Co-doped Cu₂O possess a ferromagnetic state regardless of the distance between the two Co atoms. The observed ferromagnetism can be attributed to the 90° ferromagnetic super-exchange mechanism. The presence of V_O can enhance the ferromagnetism, whereas V_Cudepresses it.     

Birefringence of optically uni-axial ternary semiconductors

Refractive indices and birefringences for some representative uni-axial crystals such as II- SiP₂ and II- GeP₂ have been determined over a wide range of wavelengths by the use of first-principles electronic structure calculations. First, the calculated refractive indices are fitted usually by a generalized Sellmeier equation which consists of several oscillation terms involve in its parameters more direct information about material such as electronic transitions or resonance wavelengths. Then, in contrast to all other semiconductors under discussion our spectra show a negative birefringence for CdSiP₂ in agreement with the experimental data, and they exhibit a considerable dispersion near the band gap.     

An organic programmable diode with pentacene, zinc oxide nanoparticles and polymethylsilsesquioxane

In this paper, we proposed an organic programmable diode as a memory device. This device consists of layers of pentacene and zinc oxide nanoparticles embedded in polymethylsilsesquioxane. The device exhibits a change in current flow of an order up to 10⁵ and is comparable or better to many reported organic diode memory devices. A two-barrier model has been used to explain the memory effect of the organic diode. The device can be written and erased multiple times similar to a flash memory.